30-5000 MHz SILICON GERMANIUM Gain Block

BGS3

1

Rev. 14.7

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2021 BeRex

• Single Fixed 3V supply

• No Dropping Resistor Required

• No matching circuit needed

• Green/RoHS2 compliant SOT-363 package

• Application: Driver Amplifier, Cellular, PCS, GSM,

UMTS, WCDMA, Wireless Data

BeRex’s BGS3 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3V supply. The

BGS3 is designed for high linearity 3V gain

block applications . It is packaged in a RoHS2

-compliant with SOT-363 surface mount

package.

Product Description

Device Features

• Driver Amplifier

• Cellular, PCS, GSM, UMTS, WCDMA

• Military wireless system

Applications

Applications Circuit

*C1, C2, C3 =100 pF ± 5%; C4 = 1 nF ± 5%; C5 = 10uF; **L1 = 56nH

**Less than 56nH improves RF performance at over 0.9GHz.

*820nH or higher value L1 improves RF performance at under 900MHz.

*Optimum value of L1 may vary with board design.

*C1,C2=2nF, L1=820nH for 50MHz application.

B3X

X

IN

GND

GND

OUT

GND

GND

Pin Description

RF IN

3

RF OUT

6

GND

1,2,4,5

Application Circuit Values Example

Freq.

30~700MHz

0.7 ~ 3GHz

3 ~ 4GHz

4 ~ 5GHz

C1/C2

2nF

100pF

10pF

10pF

L1

820nH

56nH

12nH

10nH

(1608 Ind.)

*C1,C2=10pF, L1=12nH for 3.5GHz application.

Part Marking (XX:Wafer number)

Electrical Specifications

Absolute Maximum Ratings

Parameter

Rating

Unit

Storage Temperature

-55 to +155

°C

Junction Temperature

170

°C

Supply Voltage

+3.7

V

Supply Current

120

mA

Input RF Power

12

dBm

Operation of this device above any of these parameters may result in permanent damage.

Device performance _ measured on a BeRex evaluation board at 25°C, Vc=3V, 50 Ω system.

Parameter

Conditions

Min

Typ

Max

Unit

Operational

Frequency Range

30

5000

MHz

Test Frequency

900

MHz

Gain

23.9

25.4

dB

Input Return Loss

-17.0

dB

Output Return Loss

-14.0

dB

Output IP3

0 dBm / tone ,

Δf=1 MHz

27.5

30.5

dBm

Output P1dB

16.4

17.4

dBm

Noise Figure

1.7

dB

Parameter

Min

Typ

Max

Unit

Bandwidth

30

5000

MHz

IC @ (Vc = 3 V)

40

55

66

mA

VC

2.7

3.0

3.3

V

dG/dT

-0.006

RTH

130

°C/W

Operating Case Temperature

-40

+105

°C

Recommended Operating Conditions

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating conditions.

C1

C2

RF In

RF Out

BGS3

Vcc

L1

C3

C4

C5