AP9575GI

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

-60

-

-

V

Static Drain-Source On-Resistance

2

-

-

70

mΩ

-

-

90

mΩ

Gate Threshold Voltage

-1

-

-3

V

Forward Transconductance

-

14

-

S

-

-

-10

uA

-

-

-25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

21

34

nC

Gate-Source Charge

-

5

-

nC

Gate-Drain ("Miller") Charge

-

11

-

nC

Turn-on Delay Time

2

-

10

-

ns

Rise Time

-

18

-

ns

Turn-off Delay Time

-

24

-

ns

Fall Time

-42

-

ns

Input Capacitance

-

1760

2800

pF

Output Capacitance

-

160

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

130

-

pF

Gate Resistance

f=1.0MHz

-

5

8

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward On Voltage

2

-

-

-1.3

V

Reverse Recovery Time

2

-

46

-

ns

Reverse Recovery Charge

dI/dt=-100A/µs

-

100

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT

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