5.4 Electrical Characteristics

PARAMETER

TEST CONDITIONS

VCC

(V)

25

℃

–40

℃ to 85℃

–55

℃ to

125

℃

UNIT

VI (V)

IO (mA)

MIN

TYP

MAX

MIN

MAX

MIN

MAX

HC TYPES

VIH

High level input voltage

2

1.5

1.5

1.5

V

4.5

3.15

3.15

3.15

6

4.2

4.2

4.2

VIL

Low level input voltage

2

0.5

0.5

0.5

V

4.5

1.35

1.35

1.35

6

1.8

1.8

1.8

VOH

High level output voltage CMOS

loads

VIH or VIL

-0.02

2

1.9

1.9

1.9

V

-0.02

4.5

4.4

4.4

4.4

-0.02

6

5.9

5.9

5.9

High level output voltage TTL

loads

-6

4.5

3.98

3.84

3.7

-7.8

6

5.48

5.34

5.2

VOL

Low level output voltage CMOS

loads

VIH or VIL

0.02

2

0.1

0.1

0.1

V

0.02

4.5

0.1

0.1

0.1

0.02

6

0.1

0.1

0.1

Low level output voltage TTL

loads

VIH or VIL

6

4.5

0.26

0.33

0.4

7.8

6

0.26

0.33

0.4

II

Input leakage current

VCC or

GND

6

±0.1

±1

±1

μA

ICC

Quiescent device current

VCC or

GND

0

6

8

80

160

μA

IOZ

Three-state leakage current

VIH or VIL

VO = VCC or

GND

6

±0.5

±5

±10

μA

HCT TYPES

VIH

High level input voltage

4.5 to

5.5

2

2

2

V

VIL

Low level input voltage

4.5 to

5.5

0.8

0.8

0.8

V

VOH

High level output voltage CMOS

loads

VIH or VIL

-0.02

4.5

4.4

4.4

4.4

V

High level output voltage TTL

loads

-4

4.5

3.98

3.84

3.7

VOL

Low level output voltage CMOS

loads

VIH or VIL

0.02

4.5

0.1

0.1

0.1

V

Low level output voltage TTL

loads

4

4.5

0.26

0.33

0.4

II

Input leakage current

VCC or

GND

0

5.5

±0.1

±1

±1

μA

ICC

Quiescent device current

VCC or

GND

0

5.5

8

80

160

μA

ΔICC

Additional supply current per input

pin: 1 Unit Load(1)

VCC - 2.1

4.5 to

5.5

100

360

450

490

μA

IOZ

Three-state leakage current

VIL or VIH

VO = VCC or

GND

5.5

±0.5

±5

±10

μA

(1)

For dual-supply systems theoretical worst case (VI = 2.4 V, VCC = 5.5 V) specification is 1.8 mA

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SCHS180D – NOVEMBER 1997 – REVISED JULY 2022

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