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ADC08060 датащи(PDF) 3 Page - Texas Instruments |
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ADC08060 датащи(HTML) 3 Page - Texas Instruments |
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3 / 32 page ![]() GND VA ADC08060 www.ti.com SNAS120H – OCTOBER 2000 – REVISED MARCH 2013 PIN DESCRIPTIONS AND EQUIVALENT CIRCUITS Pin No. Symbol Equivalent Circuit Description 6 VIN Analog signal input. Conversion range is VRB to VRT. Analog Input that is the high (top) side of the reference ladder of the ADC. Nominal range is 1.0V to VA. Voltage on VRT and 3 VRT VRB inputs define the VIN conversion range. Bypass well. See THE ANALOG INPUT for more information. Mid-point of the reference ladder. This pin should be bypassed 9 VRM to a clean, quiet point in the analog ground plane with a 0.1 µF capacitor. Analog Input that is the low side (bottom) of the reference ladder of the ADC. Nominal range is 0.0V to (VRT – 1.0V). 10 VRB Voltage on VRT and VRB inputs define the VIN conversion range. Bypass well. See THE ANALOG INPUT for more information. Power Down input. When this pin is high, the converter is in 23 PD the Power Down mode and the data output pins hold the last conversion result. CMOS/TTL compatible digital clock Input. VIN is sampled on 24 CLK the falling edge of CLK input. 13 thru 16 Conversion data digital Output pins. D0 is the LSB, D7 is the and D0–D7 MSB. Valid data is output just after the rising edge of the CLK 19 thru 22 input. 7 VIN GND Reference ground for the single-ended analog input, VIN. Positive analog supply pin. Connect to a clean, quiet voltage source of +3V. VA should be bypassed with a 0.1 µF ceramic 1, 4, 12 VA chip capacitor for each pin, plus one 10 µF capacitor. See POWER SUPPLY CONSIDERATIONS for more information. Power supply for the output drivers. If connected to VA, 18 DR VD decouple well from VA. 17 DR GND The ground return for the output driver supply. 2, 5, 8, 11 AGND The ground return for the analog supply. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 2000–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: ADC08060 |
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