TSM2N7002E datasheet(2/7 Pages) TSC

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TSM2N7002E

60V N-Channel MOSFET

2/7

Version: A07

Electrical Specifications (Ta = 25oC, unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 10µA

BVDSS

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

1.0

2.5

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

IDSS

1.0

µA

VGS = 10V, VDS = 7.5V

800

1300

On-State Drain Current

VGS = 4.5V, VDS = 10V

ID(ON)

500

700

VGS = 10V, ID = 300mA

1.9

Drain-Source On-State Resistance

VGS = 4.5V, ID = 200mA

RDS(ON)

2.7

Forward Transconductance

VDS = 15V, ID = 300mA

gfs

320

Diode Forward Voltage

IS = 300mA, VGS = 0V

VSD

0.9

1.2

Dynamic

Total Gate Charge

0.4

0.6

Gate-Source Charge

Qgs

0.06

Gate-Drain Charge

VDS = 10V, ID = 250mA,

VGS = 4.5V

Qgd

0.06

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Crss

Switching

Turn-On Delay Time

td(on)

7.5

Turn-On Rise Time

Turn-Off Delay Time

td(off)

7.5

Turn-Off Fall Time

VDD = 30V,

ID = 100mA, VGEN = 10V,

RG = 10Ω

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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