KTC3228 datasheet(1/2 Pages) ISC

номер детали	KTC3228

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

KTC3228

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 160V(Min)

·

Low Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ (IC= 0.5A)

APPLICATIONS

· Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

1

A

PC

Collector Power Dissipation

@ TC=25℃

0.9

W

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.78

℃

/W

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