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C122F1G датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали C122F1G
подробное описание детали  isc Thyristors
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C122F1G датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Thyristors
C122F1G
www.iscsemi.com
1
FEATURES
·
Small, Rugged, ThermowattConstruction for Low
ThermalResistance, High HeatDissipation and Durability
·
Blocking Voltage to 50 Volts
APPLICATIONS
· Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM
Repetitive peak off-state voltage
50
V
VRRM
Repetitive peak reverse voltage
50
V
IT(RSM)
RSM on-state current
180°Conduction Angles; TC = 75℃
8
A
ITSM
Surge non-repetitive on-state current
1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C
90
A
I2t
Circuit Fusing Consideration (t = 8.3 ms)
34
A2S
PG(AV)
Average gate power dissipation
t = 8.3 ms, TC = 70°C
0.5
W
Tj
Operating junction temperature
-40~125
℃
Tstg
Storage temperature
-40~150
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM Rated;
VD=VDRM Rated;
Tj=25℃
Tj=125℃
--
10
0.5
μ
A
mA
IDRM
Repetitive peak off-state current
VTM
On-state voltage
IT=16A;
--
1.83
V
IGT
Gate-trigger current
VD =12V;RL=100Ω;
--
25
mA
VGT
Gate-trigger voltage
VD =12V;RL=100Ω;
--
1.5
V
Rth( j-c)
Junction to case
--
1.8
℃
/W


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