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USBUF02W6 датащи(PDF) 6 Page - STMicroelectronics

номер детали USBUF02W6
подробное описание детали  EMI filter and line termination for USB upstream ports
PDF  11 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

USBUF02W6 датащи(HTML) 6 Page - STMicroelectronics

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USBUFxxW6
6/11
Figure 8.
Remaining voltage at both stages S1 (Vinput) and S2 (Voutput) during
ESD surge
Please note that the USBUFxxW6 is not only acting for positive ESD surges but also for
negative ones. For these kinds of disturbances it clamps close to ground voltage as
shown in Figure 8. (negative surge.
2.4
Latch-up phenomena
The early ageing and destruction of IC’s is often due to latch-up phenomenon which is
mainly induced by dV/dt. Thanks to its structure, the USBUFxxW6 provides a high immunity
to latch-up phenomenon by smoothing very fast edges.
2.5
Crosstalk behavior
Figure 9.
Crosstalk phenomenon.
The crosstalk phenomenon is due to the coupling between 2 lines. The coupling factor (
β12
or
β21) increases when the gap across lines decreases, particularly in silicon dice. In the
example above the expected signal on load RL2 is α2VG2, in fact the real voltage at this point
has got an extra value
β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into
account when the drivers impose fast digital data or high frequency analog signals in the
disturbing line. The perturbed line will be more affected if it works with low voltage signal or
high load impedance (few k
Ω).
Vin
Vout
Vin
Vout
Positive surge
Negative surge
Line 1
Line 2
VG1
VG2
RG1
RG2
DRIVERS
RL1
RL2
RECEIVERS
αβ
1
G1
1 2
G2
V+
V
αβ
2
G2
2 1
G1
V+
V



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