TLV2731, TLV2731Y

Advanced LinCMOS

 RAIL-TO-RAIL

LOW-POWER SINGLE OPERATIONAL AMPLIFIERS

SLOS198A – AUGUST 1997 – REVISED MARCH 2001

2

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TLV2731Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2731C. Thermal compression

or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with

conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 10 MILS TYPICAL

BONDING PADS: 4

× 4 MILS MINIMUM

TJmax = 150°C

TOLERANCES ARE

±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (2) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

+

–

OUT

IN +

IN –

VDD +

(2)

(3)

(4)

(1)

(5)

VDD – / GND

46

(3)

(2)

(1)

(5)

(4)

31