IXFK48N60P datasheet(1/4 Pages) IXYS

номер детали	IXFK48N60P

подробное описание детали	PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 4 page

DS99375E(02/06)

PolarHVTM HiPerFET

Power MOSFET

V

DSS

=

600 V

I

D2

=48

A

R

DS(on)

≤≤≤≤≤

135m

Ω

t

rr

≤≤≤≤≤

200 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l International standard packages

l Fast recovery diode

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

600

V

GS(th)

V

DS = VGS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

1000

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

135

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25° C to 150° C

600

V

DGR

T

J = 25° C to 150° C; RGS = 1 MΩ

600

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25° C48

A

I

DM

T

C = 25° C, pulse width limited by TJM

110

A

I

AR

T

C = 25° C48

A

E

AR

T

C = 25° C70

mJ

E

AS

T

C = 25° C

2.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

20

V/ns

T

J ≤150° C, RG = 4 Ω

P

D

T

C = 25° C

830

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque (TO-264)

1.13/10 Nm/lb.in.

Weight

TO-264

10

g

PLUS247

6

g

T

L

1.6 mm (0.062 in.) from case for 10 s

300

° C

T

SOLD

Plastic body for 10 s

260

° C

PLUS247 (IXFX)

(TAB)

G = Gate

D

= Drain

S = Source

Tab = Drain

S

G

D

(TAB)

TO-264 (IXFK)

IXFK 48N60P

IXFX 48N60P

Аналогичный номер детали - IXFK48N60P

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Inchange Semiconductor ...	IXFK48N60P	329Kb / 2P	isc N-Channel MOSFET Transistor

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