74V1T66 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

DC SPECIFICATIONS

Symb ol

Parameter

T est Cond ition s

Val ue

Un it

VCC

(V)

TA =25

-40 to 85

Min.

Typ .

Max.

Min .

Max.

VIH

High Level Input Voltage

5.0

(*)

2.0

VIL

Low Level Input Voltage

0.8

RON

ON Resistance

5.0

(*)

VIC =VIH

VI/O =VCC to G ND

II/O

≤ 1mA

Ω

RON

ON Resistance

5.0

(*)

VIC =VIH

VI/O =VCC or GND

II/O

≤ 1mA

Ω

IOFF

Input/Output Leakage

Current (SWITCH OFF)

5.5

VOS =VCC to GND

VIS =VCC to GND

VIC =VIL

±0.1

±1.0

µA

IIZ

Switch Input Leakage

Current (SWITCH ON,

OUTPUT OPEN)

5.5

VOS =VCC to GND

VIC =VIH

±0.1

±1.0

µA

IIN

Control Input Leakage

Current

0to

5.5

VIC = 5.5V or GND

±0.1

±1.0

µA

ICC

Quiescent Supply Current

5.5

VIC =VCC or GND

µA

(*) Voltage range is 5V

± 0.5V

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr =tf =3 ns)

Symb ol

Parameter

Test Co nditi on

Val ue

Un it

VCC

(V)

TA =25

-40 to 85

Min.

Typ .

Max.

Min .

Max.

tPD

Delay Time

5.0

(*)

0.1

0.2

1.0

tPZL

tPZH

Output Enable Time

5.0

(*)

RL =1k

Ω

2.0

4.0

5.0

tPLZ

tPHZ

Output Disable Time

5.0

(*)

RL =1k

Ω

5.0

7.5

9.0

CIN

Input Capacitance

CI/O

Switch Terminal

Capacitance

CPD

Power Dissipation

Capacitance (note 1)

5.0

1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto

Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD

•VCC •fIN +ICC (switch).

(*) Voltage range is 5V

± 0.5V

74V1T66

3/8

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