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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STR910FAW32 датащи(PDF) 88 Page - STMicroelectronics |
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STR910FAW32 датащи(HTML) 88 Page - STMicroelectronics |
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88 / 99 page  Electrical characteristics STR91xFAx32 STR91xFAx42 STR91xFAx44 88/99 tCONV(FT] Fast trigger mode conversion time (5) 1*16/fADC µs fADC = 24 MHz 0.66 µs TR(FT) Fast trigger mode throughput rate(6) fADC = 24 MHz 100 1200 ksps 1. Guaranteed by design, not tested in production. 2. Parameters in this table apply to devices with silicon Rev H and higher. Refer to Table 6 for device rev identification in OTP memory and to Section 8: Device marking. 3. Value obtained from conversions started by trigger in single mode 4. All sucessive conversions in continuous and scan modes. 5. Conversion started by trigger when automatic clock gated mode enabled. Fast trigger mode is available only in devices with silicon Rev H and higher. 6. Value obtained from conversions started by fast trigger in single mode Table 47. ADC conversion time (silicon Rev H) Symbol Parameter(1) (2) Test Conditions Value Unit Min Typ Max Table 48. ADC conversion time (silicon Rev G and lower) Symbol Parameter(1) (2) Test Conditions Value Unit Min Typ Max tCONV(S] Single mode conversion time 2*16/fADC 3*16/fADC µs fADC = 24 MHz 1.33 2 TR(S) Single mode throughput rate (3) fADC = 24 MHz 500 ksps tCONV(C] Continuous mode conversion time (4) 1*16/fADC µs fADC = 24 MHz 0.66 µs TR(C) Continuous mode throughput rate fADC = 24 MHz 1500 ksps 1. Guaranteed by design, not tested in production. 2. Parameters in this table apply to devices with silicon Rev G and lower. Refer to Table 6 for device rev identification in OTP memory and to Section 8: Device marking. 3. Value obtained on conversions started by trigger in single mode 4. All sucessive conversions in continuous and scan modes. |
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