Data Sheet

ADRF5060

SPECIFICATIONS

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Rev. 0 | 4 of 16

Table 1. Specifications (Continued)

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

INPUT LINEARITY

0.1dB Power Compression

P0.1dB

f = 0.1GHz to 20GHz

External Path A or External Path B Selected

>33

dBm

Through Path

>33

dBm

Third-Order Intercept

IP3

Two-tone input power (PIN) = 15dBm continuous wave per tone,

f = 0.1GHz to 20GHz, Δf = 1MHz

External Path A or External Path B Selected

58

dBm

Through Path

57

dBm

SUPPLY CURRENT

Positive

IDD

160

μA

Negative

ISS

500

μA

DIGITAL CONTROL INPUTS

Voltage

Low

VINL

0

0.8

V

High

VINH

1.2

3.45

V

Current

Low

IINL

V1 and V2 pins

<1

μA

XC pin

<1

μA

High

IINH

V1 and V2 pins

<1

μA

XC pin

33

μA

RECOMMENDED OPERATING CONDITIONS

Positive Supply Voltage

VDD

3.15

3.45

V

Negative Supply Voltage

VSS

−3.45

−3.15

V

Digital Control Input Voltage

V1 and V2

0

VDD

V

RF Input Power

f = 0.1GHz to 20GHz, TCASE = 85°C, life time

External Path A or External Path B Selected

RF signal is applied to RFIN or selected external RF path

Average

30

dBm

Peak

33

dBm

Through Path

RF signal is applied to RFIN or RFOUT ports

Average

30

dBm

Peak

33

dBm

Terminated Path

RF signal is applied to unselected (off) external RF paths

Average

18

dBm

Hot Switching

For RFIN and OUT

RF signal is applied to RFIN or RFOUT while switching

30

dBm

For INA, INB, OUTA, and OUTB

RF signal is applied to external RF path while switching

18

dBm

TCASE

–40

+105

°C