HAT1111C datasheet(2/7 Pages) RENESAS

2 / 7 page

HAT1111C

R07DS1177EJ0700 Rev.7.00

Page 2 of 6

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown voltage

V(BR)DSS

–60

—

ID = –10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

–20

+10

—

IG =

±100 μA, VDS = 0

Gate to Source leakage current

IGSS

—

±10

μA

VGS = –16 / +8 V, VDS = 0

Drain to Source leakage current

IDSS

—

-1

μA

VDS = –60 V, VGS = 0

Gate to Source cutoff voltage

VGS(th)

–1

—

-2

ID = –1 mA, VDS = -10 V

Note3

Drain to Source on state resistance

RDS(on)

—

245

307

ID = –1 A, VGS = -10 V

Note3

RDS(on)

—

310

450

ID = –1 A, VGS = -4.5 V

Note3

Forward transfer admittance

| yfs |

0.65

—

ID = –1 A, VDS = -10 V

Note3

Input capacitance

Ciss

—

290

—

VDS = –10 V, VGS = 0

f = 1 MHz

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Total gate charge

—

VDS = –10 V, VGS = –10 V

ID = –2 A

Gate to Source charge

Qgs

—

0.7

—

Gate to Drain charge

Qgd

—

1.2

—

Turn - on delay time

td(on)

—

VDS = –10 V, VGS = –10 V

ID = –1 A, RL = 10

Ω,

Rg = 4.7

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

Body - Drain diode forward voltage

VDF

—

–0.85

–1.2

IF = –2 A, VGS = 0

Notes: 3. Pulse test

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