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LP5520TL/NOPB.A датащи(PDF) 35 Page - Texas Instruments

номер детали LP5520TL/NOPB.A
подробное описание детали  LP5520 RGB Backlight LED Driver
PDF  45 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
Logo TI2 - Texas Instruments

LP5520TL/NOPB.A датащи(HTML) 35 Page - Texas Instruments

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0
0.5
1.0
1.5
2.0
2.5
TIME (Ps)
INDUCTOR TDK VLF 3010 ± 4.7 PH
SUPPLY VOLTAGE (V)
3.0
3.2
3.5
3.7
4.0
4.2
80 mA
40 mA
20 mA
80.0
82.0
84.0
86.0
88.0
90.0
ILOAD = 60 mA
35
LP5520
www.ti.com
SNVS440B – MAY 2007 – REVISED MARCH 2016
Product Folder Links: LP5520
Submit Documentation Feedback
Copyright © 2007–2016, Texas Instruments Incorporated
8.2.1.2.1.5
Inductor: L1
A 4.7-µH shielded inductor is suggested for LP5520 boost converter. The inductor must have a higher saturation
current rating than the peak current it receives during circuit operation (0.5 A – 1 A depending on the output
current). Equivalent series resistance (ESR) less than 500-m
Ω is suggested for high efficiency. Open core
inductors cause flux linkage with circuit components and interfere with the normal operation of the circuit. This
must be avoided. For high efficiency, choose an inductor with a high-frequency core material such as ferrite to
reduce the core losses. To minimize radiated noise, use a toroid, pot core or shielded core inductor. The inductor
must be connected to the SW pin as close to the device as possible. Examples of suitable inductors are: TDK
VLF3010AT-4R7MR70 and Coilcraft LPS3010-472NL.
8.2.1.2.1.6
List Of Recommended External Components
SYMBOL
SYMBOL EXPLANATION
VALUE
UNIT
TYPE
CVDDA
C between VDDA and GND
100
nF
Ceramic, X7R / X5R
CVDDD
C between VDDD and GND
100
nF
Ceramic, X7R, X5R
CVLDO
C between VLDO and GND
1
µF
Ceramic, X7R / X5R
CVDDIO
C between VDDIO and GND
100
nF
Ceramic, X7R / X5R
COUT
C between FB and GND
2 × 4.7
µF
Ceramic, X7R / X5R, tolerance ±10%, DC bias
effect approximately 30% at 20 V
CIN
C between battery voltage and GND
10
µF
Ceramic, X7R / X5R
L1
L between SW and VBAT
4.7
µH
Shielded, low ESR, ISAT 0.5 A
D1
Rectifying diode (Vƒ at maximum load)
0. 3 – 0.5
V
Schottky diode, reverse voltage 30 V, repetitive
peak current 0.5 A
CSW
Optional C in EMI filter
330
pF
Ceramic, X7R / X5R, 50V
RSW
Optional R in EMI filter
3.9
±1%
CHF
Optional high frequency output C
33 - 100
pF
Ceramic, X7R, X5R, 50V
LSW
Ferrite bead in SW pin
30 - 300
at 100 Mhz
LEDs
User Defined
8.2.1.3 Application Curves
Figure 33. Boost Converter Efficiency
Figure 34. Boost Typical Waveforms at 60-mA Load



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