LP3986

www.ti.com

SNVS142U – AUGUST 2001 – REVISED FEBRUARY 2013

LP3986 Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in DSBGA

Package

Check for Samples: LP3986

1

FEATURES

DESCRIPTION

The LP3986 is a 150 mA dual low dropout regulator

2

•

Miniature 8-I/O DSBGA Package

designed for portable and wireless applications with

•

Stable With 1µF Ceramic and High Quality

demanding

performance

and

board

space

Tantalum Output Capacitors

requirements.

•

Fast Turn-on

The LP3986 is stable with a small 1 µF ±30%

•

Two Independent Regulators

ceramic output capacitor requiring smallest possible

board space.

•

Logic Controlled Enable

•

Over Current and Thermal Protection

The LP3986's performance is optimized for battery

powered systems to deliver ultra low noise, extremely

APPLICATIONS

low dropout voltage and low quiescent current

independent of load current. Regulator ground current

•

CDMA Cellular Handsets

increases very slightly in dropout, further prolonging

•

GSM Cellular Handsets

the battery life. Optional external bypass capacitor

reduces the output noise further without slowing down

•

Portable Information Appliances

the load transient response. Fast start-up time is

•

Portable Battery Applications

achieved by utilizing a speed-up circuit that actively

pre-charges the bypass capacitor. Power supply

rejection is better than 60 dB at low frequencies and

55 dB at 10 kHz. High power supply rejection is

maintained at low input voltage levels common to

battery operated circuits.

The LP3986 is available in a DSBGA package.

Performance is specified for a

−40°C to +125°C

temperature range. For single LDO applications,

please refer to the LP3985 datasheet.

Table 1. Key Specifications

VALUE

UNIT

Guaranteed output current per regulator

150

mA

Typical quiescent current when both regulators in shutdown mode

1

nA

Typical dropout voltage at 150 mA output current

60

mV

Typical ground current

115

µA

Typical output noise

40

µV

Fast turn-on circuit

200

µs

Junction temperature

−40 to +125

°C

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2001–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.