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74ACT14 датащи(PDF) 4 Page - STMicroelectronics |
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74ACT14 датащи(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() CAPACITIVE CHARACTERISTICS Symb ol Parameter Test Co nditi ons Valu e Un it VCC (V) TA =25 oC -40 to 85 oC Min. T yp. Max. Mi n. Max. CIN Input Capacitance 5.0 510 10 pF CPD Power Dissipation Capacitance (note 1) 5.0 30 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN +ICC/6 (per circuit) TEST CIRCUIT CL = 50 pF or equivalent (includes jigand probe capacitance) RL =R1 =500 Ω orequivalent RT =ZOUT of pulse generator (typically 50 Ω) WAVEFORM: PROPAGATION DELAYS (f=1MHz) 74ACT14 4/7 |
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