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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM3460 датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM3460 датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM3460 20V N-Channel MOSFET w/ESD Protected 1/6 Version: B07 SOT-26 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package Packing TSM3460CX6 RF SOT-26 3Kpcs / 7” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 6 A Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) a,b IS 1.4 A Ta = 25 oC 1.3 Maximum Power Dissipation Ta = 75 oC PD 0.96 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJF 30 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 80 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 22 @ VGS = 4.5V 6 40 @ VGS = 2.5V 5 20 60 @ VGS = 1.8V 2 Block Diagram N-Channel MOSFET Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source |
Аналогичный номер детали - TSM3460 |
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Аналогичное описание - TSM3460 |
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