Silicore

D52003

SHAOXING SILICORE TECHNOLOGY CO.,LTD

www. Silicore. com. cn

CHMC

2/7

MAXIMUM RATINGS (Ta=25 ° C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Supply Vo ltage

Vcc

8

V

DIP-16

750

Power Dissipation

SSOP-16

PD(Note)

350

mW

Operating Te m p erature

Topr

-25~75

° C

S t orage Te m p erature

Ts tg

-55~150

° C

(Note):

Derated ab ove Ta =25 ° C in the proportion of 6 m W/ ° C fo r DIP16 and of

2.8m W/ ° C for SSOP16

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, Ta =25 ° C, Vcc=3V,

F / E : f = 9 8 M H z , f m = 1 K H z

FM IF :

f=10.7MHz, Δ f= ± 22.5KHz, fm =1KHz

AM

: f=1MHz ,MOD=30%,fm = 1KHz)

CHARACTER

SYMBO L

TEST

CIR-

CUIT

TEST

CONDITION

MIN T YP MA X

UNIT

Icc(FM)

1

FM m ode,Vin=0

-

10.5 16.5

Supply Current

Icc(AM)

1

AM m ode, Vi n=0

-

5.0

8.0

mA

Input Lim iting

Vo ltage

Vi n(lim )

1

-3dB lim iting

point

-

12

-

dBµV EMF

Quiescent

Sensitivity

Qs

1

S/N=30dB

-

12

-

dBµV EMF

Local OSC

Vo ltage

Vo sc

2

fosc=108MHz

160 240

320

m Vrm s

F/E

Local OSC

S t op Vo ltage

Vstop

(FM)

2

Vi n=0

-

1.2

-

V

Input Lim iting

Vo ltage

Vi n(lim )

IF

1

-3dB lim iting

point

42

47

52

dBµV EMF

Recovered

Output Vo ltage

V OD

1

Vi n=80dBµV EMF

5 0

70

90

m Vrm s

Signal to Noise

Ratio

S/N

1

Vi n=80dBµV EMF

-

62

-

dB

To tal Harm onic

Distortion

THD

1

Vi n=80dBµV EMF

-

0.4

-

%

FM

IF

AM Rejection

Ratio

AMR

1

Vi n=80dBµV EMF

-

33

-

dB