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TSC128DCZ датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSC128DCZ
подробное описание детали  High Voltage Fast-Switching NPN Power Transistor
PDF  5 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC128DCZ датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TSC128DCZ Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TSC128DCZ Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TSC128DCZ Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd TSC128DCZ Datasheet HTML 4Page - Taiwan Semiconductor Company, Ltd TSC128DCZ Datasheet HTML 5Page - Taiwan Semiconductor Company, Ltd  
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TSC128D
High Voltage Fast-Switching NPN Power Transistor
2/5
Version: A07
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB =700V, IE =0
ICBO
--
--
100
uA
Collector Cutoff Current
VCE =400V, IB =0
ICEO
--
--
250
uA
Emitter Cutoff Current
VEB =7V, IC =0
IEBO
--
--
10
uA
IC =0.5A, IB =0.1A
VCE(SAT)1
--
--
0.7
IC =1A, IB =0.2A
VCE(SAT)2
--
--
1
IC =2.5A, IB =0.5A
VCE(SAT)3
--
--
1.5
Collector-Emitter Saturation Voltage
IC =4A, IB =1A
VCE(SAT)4
--
0.9
--
V
IC =0.5A, IB =0.1A
VBE(SAT)1
--
--
1.1
IC =1A, IB =0.2A
VBE(SAT)2
--
--
1.2
Base-Emitter Saturation Voltage
IC =2.5A, IB =0.5A
VBE(SAT)3
--
--
1.3
V
VCE =5V, IC =10mA
10
--
--
VCE =5V, IC =2A
12
--
32
DC Current Gain
VCE =5V, IC =2.5A
Hfe
8
--
--
Forward Voltage Drop
If =2A
Vf
--
--
2
V
Turn On Time
tON
--
--
0.6
uS
Storage Time
tSTG
2.5
3.0
3.5
uS
Fall Time
VCC =250V, IC =2A,
IB1=IB2=0.4A, tp=25uS
Duty Cycle<1%
tf
--
0.2
0.3
uS
Notes: Pulsed duration =300uS, duty cycle ≤2%



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