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M29W800AT датащи(PDF) 19 Page - STMicroelectronics

номер детали M29W800AT
подробное описание детали  8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
PDF  40 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M29W800AT датащи(HTML) 19 Page - STMicroelectronics

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M29W800AT, M29W800AB
Table 15. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Symbol
Alt
Parameter
Test
Condition
M29W800AT / M29W800AB
Unit
80
90
VCC = 3.0V to 3.6V
CL = 30pF
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next
Address Valid
E = VIL,
G =VIL
80
90
ns
tAVQV
tACC
Address Valid to Output
Valid
E = VIL,
G =VIL
80
90
ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL,
G =VIL
00
ns
tBHQV
tFHQV
BYTE Switching High to
Output Valid
50
50
ns
tBLQZ
tFLQZ
BYTE Switching Low to
Output High Z
50
50
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output
Hi-Z
G = VIL
30
30
ns
tELBH
tELBL
tELFH
tELFL
Chip Enable to BYTE
Switching Low or High
55
ns
tELQV
(2)
tCE
Chip Enable Low to Output
Valid
G = VIL
80
90
ns
tELQX
(1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
00
ns
tGHQX
tOH
Output Enable High to
Output Transition
E = VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to
Output Hi-Z
E = VIL
30
30
ns
tGLQV
(2)
tOE
Output Enable Low to
Output Valid
E = VIL
35
35
ns
tGLQX
(1)
tOLZ
Output Enable Low to
Output Transition
E = VIL
00
ns
tPHEL
tRH
RP High to Chip Enable
Low
50
50
ns
tPLYH
(1, 3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPLPX
tRP
RP Pulse Width
500
500
ns



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