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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISO124P.B датащи(PDF) 20 Page - Texas Instruments |
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ISO124P.B датащи(HTML) 20 Page - Texas Instruments |
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20 / 29 page  ISO124 GND +VS2 1 Top View LEGEND TOP layer: copper pour & traces GND via to ground plane -VS2 VIN VOUT GND 1 µF SMD 0603 1 µF SMD 0603 -VS1 +VS1 1 µF SMD 0603 1 µF SMD 0603 ISOLATION BOUNDARY ISOLATION BOUNDARY 20 ISO124 SBOS074E – SEPTEMBER 1997 – REVISED JUNE 2018 www.ti.com Product Folder Links: ISO124 Submit Documentation Feedback Copyright © 1997–2018, Texas Instruments Incorporated 10 Layout 10.1 Layout Guidelines To maintain the isolation barrier of the device, the distance between the high-side ground (pin 16 or 28) and the low-side ground (pin 8 or 14) should be kept at maximum; that is, the entire area underneath the device should be kept free of any conducting materials. 10.2 Layout Example Figure 25. ISO124 Layout Example |
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