| поискавой системы для электроныых деталей |
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2SD1362 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1362 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1362 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) · Collector Power Dissipation- : PC= 40W@ TC= 25℃ · Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A · Complement to Type 2SB992 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High current switching applications. · Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @Ta=25℃ 1.5 W Collector Power Dissipation @TC=25℃ 40 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Аналогичный номер детали - 2SD1362 |
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Аналогичное описание - 2SD1362 |
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