2N5415 datasheet(1/4 Pages) STMICROELECTRONICS

номер детали	2N5415

подробное описание детали	SILICON PNP TRANSISTORS

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2N5415

2N5416

SILICON PNP TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

PNP TRANSISTOR

DESCRIPTION

The 2N5415, 2N5416 are high voltage silicon

epitaxial planar PNP transistors in Jedec TO-39

metal case designed for use in consumer and

industrial line-operated applications.

These devices are particularly suited as drivers in

high-voltage low current inverters, switching and

series regulators.

INTERNAL SCHEMATIC DIAGRAM

June 1997

TO-39

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

2N5415

2N5416

VCBO

Collector-Base Voltage (IE = 0)

-200

-350

V

VCEO

Collector-Emitter Voltage (IB = 0)

-200

-300

V

VEBO

Emitter-Base Voltage (IC = 0)

-4

-6

V

IC

Collector Current

-1

A

IB

Base Current

-0.5

A

Ptot

Total Dissipation at Tc

≤ 25 oC10

W

Ptot

Total Dissipation at Tamb

≤ 50 oC1

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

1/4

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