BAS85_5

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 05 — 25 March 2009

2 of 9

NXP Semiconductors

BAS85

Schottky barrier diode

2.

Pinning information

[1]

The marking band indicates the cathode.

3.

Ordering information

4.

Marking

[1]

grey: made in Philippines

purple: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

cathode

[1]

2

anode

ka

sym001

12

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAS85

-

hermetically sealed glass surface-mounted package;

2 connectors

SOD80C

Table 4.

Marking codes

Type number

Marking code[1]

BAS85

marking band

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

-

30

V

IF

forward current

-

200

mA

IF(AV)

average forward current

[1] -

200

mA

IFRM

repetitive peak forward

current

tp ≤ 1s; δ≤ 0.5

-

300

mA

IFSM

non-repetitive peak

forward current

tp =10ms

-

5

A

Tj

junction temperature

-

125

°C

Tamb

ambient temperature

−65

+125

°C

Tstg

storage temperature

−65

+150

°C