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INA111 датащи(PDF) 2 Page - Texas Instruments

номер детали INA111
подробное описание детали  High Speed FET-Input INSTRUMENTATION AMPLIFIER
PDF  17 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
Logo TI2 - Texas Instruments

INA111 датащи(HTML) 2 Page - Texas Instruments

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®
INA111
2
SPECIFICATIONS
ELECTRICAL
At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted.
T Specification same as INA111BP.
NOTE: (1) Temperature coefficient of the “50k
Ω” term in the gain equation.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INA111BP, BU
INA111AP, AU
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage, RTI
Initial
TA = +25°C
±100 ± 500/G
±500 ± 2000/G
±200 ± 500/G ±1000 ±5000/G
µV
vs Temperature
TA = TMIN to TMAX
±2 ± 10/G
±5 ± 100/G
±2 ± 20/G
±10 ± 100/G
µV/°C
vs Power Supply
VS = ±6V to ±18V
2 +10/G
30 + 100/G
TT
µV/V
Impedance, Differential
1012 || 6
T
Ω || pF
Common-Mode
1012 || 3
T
Ω || pF
Input Common-Mode Range
VDIFF = 0V
±10
±12
TT
V
Common-Mode Rejection
VCM = ±10V, ∆RS = 1kΩ
G = 1
80
90
75
T
dB
G = 10
96
110
90
T
dB
G = 100
106
115
100
T
dB
G = 1000
106
115
100
T
dB
BIAS CURRENT
±2
±20
TT
pA
OFFSET CURRENT
±0.1
±10
TT
pA
NOISE VOLTAGE, RTI
G = 1000, RS = 0Ω
f = 100Hz
13
T
nV/
√Hz
f = 1kHz
10
T
nV/
√Hz
f = 10kHz
10
T
nV/
√Hz
fB = 0.1Hz to 10Hz
1
T
µVp-p
Noise Current
f = 10kHz
0.8
T
fA/
√Hz
GAIN
Gain Equation
1 + (50k
Ω/R
G)
T
V/V
Range of Gain
1
10000
TT
V/V
Gain Error
G = 1, RL = 10kΩ±0.01
±0.02
T
0.05
%
G = 10, RL = 10kΩ±0.1
±0.5
TT
%
G = 100, RL = 10kΩ±0.15
±0.5
T
±0.7
%
G = 1000, RL = 10kΩ±0.25
±1
T
±2%
Gain vs Temperature
G = 1
±1
±10
TT
ppm/
°C
50k
Ω Resistance(1)
±25
±100
TT
ppm/
°C
Nonlinearity
G = 1
±0.0005
±0.005
TT
% of FSR
G = 10
±0.001
±0.005
T
±0.01
% of FSR
G = 100
±0.001
±0.005
T
±0.01
% of FSR
G = 1000
±0.005
±0.02
T
±0.04
% of FSR
OUTPUT
Voltage
IO = 5mA, TMIN to TMAX
±11
±12.7
TT
V
Load Capacitance Stability
1000
T
pF
Short Circuit Current
+30/–25
T
mA
FREQUENCY RESPONSE
Bandwidth, –3dB
G = 1
2
T
MHz
G = 10
2
T
MHz
G = 100
450
T
kHz
G = 1000
50
T
kHz
Slew Rate
VO = ±10V, G = 2 to 100
17
T
V/
µs
Settling Time, 0.01%
G = 1
2
T
µs
G = 10
2
T
µs
G = 100
4
T
µs
G = 1000
30
T
µs
Overload Recovery
50% Overdrive
1
T
µs
POWER SUPPLY
Voltage Range
±6
±15
±18
TT
T
V
Current
VIN = 0V
±3.3
±4.5
TT
mA
TEMPERATURE RANGE
Specification
–40
85
TT
°C
Operating
–40
125
TT
°C
θ
JA
100
T
°C/W



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