2SC5200 datasheet(3/7 Pages) SYC

номер детали	2SC5200

подробное описание детали	High power NPN epitaxial planar bipolar transistor

PDF	7 Pages

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производитель	SYC [SYC Electronica]

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2SC5200

Electrical characteristics

Doc ID 16310 Rev 1

3/8

Electrical characteristics

Tcase = 25 °C unless otherwise specified

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 230 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

µA

V(BR)CEO

(1)

Pulsed: pulse duration = 300 µs, duty cycle

≤ 1.5%

Collector-emitter breakdown

voltage (IB = 0)

IC = 50 mA

230

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 µA

230

V(BR)EBO

(1) Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 8 A

IB = 800 mA

VBE

Base-emitter voltage

IC = 7 A

VCE = 5 V

1.5

hFE

DC current gain

IC = 1 A

VCE = 5 V

IC = 7 A

VCE = 5 V

120

ton

Resistive load

Turn-on time

Storage time

Fall time

VCC = 60 V IC = 5A

IB1= -IB2 = 0.5 A

0.24

4.7

0.6

µs

Transition frequency

IC = 1 A

VCE = 5 V

MHz

CCBO

Collector-base capacitance

(IE = 0)

VCB = 10 V f = 1 MHz

150

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