TSM4415CSRL datasheet(2/4 Pages) TSC

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Preliminary

TSM4415

30V P-Channel MOSFET

2/2

Version: Preliminary

Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-30

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1.0

-3.0

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -24V, VGS = 0V

IDSS

-1.0

µA

On-State Drain Current

VDS ≥-10V, VGS = -5V

ID(ON)

-6

VGS = -20V, ID = -8A

VGS = -10V, ID = -8A

Drain-Source On-State Resistance

VGS = -6V, ID = -5A

RDS(ON)

mΩ

Forward Transconductance

VDS = -5V, ID = -8A

gfs

11.5

Diode Forward Voltage

IS = -1A, VGS = 0V

VSD

-0.8

-1.0

Dynamic

Total Gate Charge

18.1

Gate-Source Charge

Qgs

6.5

Gate-Drain Charge

VDS = -15V, ID = -8A,

VGS = -10V

Qgd

3.2

Input Capacitance

Ciss

1047.9

Output Capacitance

Coss

172.8

Reverse Transfer Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Crss

115.5

Switching

Turn-On Delay Time

td(on)

20.5

Turn-On Rise Time

4.4

Turn-Off Delay Time

td(off)

42.8

Turn-Off Fall Time

VDD = -15V, RL = 1.8Ω,

ID = -1A, VGEN = -10V,

RG = 3Ω

7.3

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

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