TSD1GLWH

– TSD1JLWH

Taiwan Semiconductor

2

Version: B2312

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

RӨJL

15

°C/W

Junction-to-ambient thermal resistance

RӨJA

75

°C/W

Junction-to-case thermal resistance

RӨJC

15

°C/W

Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX UNIT

Forward voltage(1)

IF = 0.5A, TJ = 25°C

VF

0.86

-

V

IF = 1.0A, TJ = 25°C

0.90

1.10

V

IF = 0.5A, TJ = 125°C

0.73

-

V

IF = 1.0A, TJ = 125°C

0.78

-

V

Reverse current @ rated VR(2)

TJ = 25°C

IR

-

1

µA

TJ = 125°C

4

-

µA

Junction capacitance

1MHz, VR = 4.0V

CJ

11

-

pF

Notes:

1.

Pulse test with PW = 0.3ms

2.

Pulse test with PW = 30ms

IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING

STANDARDS (T

A

= 25°C unless otherwise noted)

STANDARD

TEST TYPE

TEST

CONDITIONS

SYMBOL

CLASS

VALUE

AEC-Q101-001

Human body mode

C=100pF, R=1.5kΩ

Vc

H3B

≥8kV

IEC 61000-4-2

Contact mode

C=150pF,

R=330Ω

x

≥10kV

Air-discharge mode

C=150pF,

R=330Ω

4

≥15kV

ISO 10605

Contact mode

C=330pF,

R=330Ω

L3

≥10kV

ORDERING INFORMATION

ORDERING CODE(1)

PACKAGE

PACKING

TSD1xLWH

SOD-123W

10,000/ Tape & Reel

Notes:

1.

“x” defines voltage from 400V(TSD1GLWH) to 600V(TSD1JLWH)