MJ2955 datasheet(2/4 Pages) STMICROELECTRONICS

номер детали	MJ2955

подробное описание детали	COMPLEMENTARY SILICON POWER TRANSISTORS

PDF	4 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = -1.5V)

VCE = 100 V

Tj = 150

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 30 V

0.7

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 200 mA

VCER(sus)

∗ Collector-Emitter

Sustaining

Voltage (RBE = 100

Ω)

IC = 200 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 4 A

IB = 400 mA

IC = 10 A

IB = 3.3 A

VBE

∗

Base-Emitter Voltage

IC = 4 A

VCE = 4 A

1.8

hFE

∗

DC Current Gain

IC = 4 A

VCE = 4 A

IC = 10 A

VCE = 4 A

Transition frequency

IC = 0.5 A

VCE = 10 V

MHz

Is/b

∗

Second Breakdown

Collector Current

VCE = 40 V

2.87

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

2N3055 / MJ2955

2/4

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