TLP161G datasheet(3/6 Pages) TOSHIBA

номер детали	TLP161G

подробное описание детали	Photocoupler GaAs Ired & Photo-Triac

PDF	6 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 6 page

TLP161G

2007-10-01

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Forward voltage

IF=10mA

1.0

1.15

1.3

Reverse current

VR=5V

―

μA

Capacitance

V=0, f=1MHz

―

Peak off

−state current

IDRM

VDRM=400V

―

1000

Peak on

−state voltage

VTM

ITM=70 mA

―

1.7

2.8

Holding current

―

0.6

―

Critical rate of rise of

off

−state voltage

dv / dt

Vin=120Vrms, Ta=85°C

(Fig.1)

200

500

―

V / μs

Critical rate of rise of

commutating voltage

dv / dt(c)

Vin=30Vrms, IT=15mA

(Fig.1)

―

0.2

―

V / μs

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Trigger LED current

IFT

VT=3V

―

Inhibit voltage

VIH

IF=rated IFT

―

Leakage in inhibited state

IIH

IF=rated IFT

VT=rated VDRM

―

100

300

μA

Capacitance (input to output)

VS=0, f=1MHz

―

0.8

―

Isolation resistance

VS=500V, R.H.≤ 60%

1×10

―

Ω

AC, 1 minute

2500

―

AC, 1 second, in oil

―

5000

―

Vrms

Isolation voltage

BVS

DC, 1 minute, in oil

―

5000

―

Vdc

Fig.1

dv / dt test circuit

5V，VCC

dv / dt (c)

dv / dt

～

Vin

VCC

−

Rin

120

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