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TLOU114P датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLOU114P датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TLOU114P(F),TLSU114P(F),TLYU114P(F) 2007-10-01 2 Electrical and Optical characteristics (Ta = 25°C) Typ.Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product λp Δλ IF Min Typ. IF Typ. Max IF Max VR TLOU114P(F) (612) 15 20 85 250 20 2.0 2.4 20 50 4 TLSU114P(F) (636) 17 20 85 250 20 2.0 2.4 20 50 4 TLYU114P(F) (590) 13 20 47.6 130 20 2.1 2.5 20 50 4 Unit nm mA mcd mA V mA μA V Precaution Please be careful of the followings • Soldering temperature: 260°C max Soldering time: 3s max (Soldering portion of lead: up to 1.6mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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