Electrical characteristics

STRH50P6FSY3

6/13

Figure 2.

Bias condition during radiation

Table 10.

1.

Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect

(SEE). Single event effect characterization is illustrated

Ion

Let (Mev/(mg/cm2))

Energy (MeV)

Range (µm)

Kr

34

316

43

60

Xe

55.9

459

43

48

Table 11.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

50

200

A

A

(2)

2.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

1.1

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

240

300

3.85

25.6

360

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

300

376

5.64

30

451

ns

µC

A