TUAS4D

– TUAS4M

Taiwan Semiconductor

2

Version: A2406

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

RӨJL

5.2

°C/W

Junction-to-ambient thermal resistance

RӨJA

46

°C/W

Junction-to-case thermal resistance

RӨJC

8.6

°C/W

Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board)

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage(1)

IF = 2A, TJ = 25°C

VF

0.89

-

V

IF = 4A, TJ = 25°C

0.95

1.10

V

IF = 2A, TJ = 125°C

0.78

-

V

IF = 4A, TJ = 125°C

0.85

-

V

Reverse current @ rated VR(2)

TJ = 25°C

IR

-

5

µA

TJ = 125°C

10

-

µA

Junction capacitance

TUAS4D

TUAS4G

TUAS4J

1MHz, VR = 4.0V

CJ

33

-

pF

TUAS4K

TUAS4M

28

-

Notes:

1.

Pulse test with PW = 0.3ms

2.

Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE(1)

PACKAGE

PACKING

TUAS4x

TO-277A (SMPC4.6U)

6,000 / Tape & Reel

Notes:

1.

“x” define voltage from 200V(TUAS4D) to 1000V(TUAS4M)