IS-1845ASRH, IS-1845ASEH

FN9001 Rev.7.01

Page 3 of 4

Feb 16, 2022

Die Characteristics

DIE DIMENSIONS

3090µm x 4080µm (121.6 mils x 159.0 mils)

Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS

Glassivation

Type: Phosphorus Silicon Glass (PSG)

Thickness: 8.0kA ± 1.0kA

Top Metallization

Type: AlSiCu

Thickness: 16.0kA ± 2kA

Substrate

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish

Silicon

ASSEMBLY RELATED INFORMATION

Substrate Potential

Unbiased (DI)

ADDITIONAL INFORMATION

Worst Case Current Density

<2.0 x 105 A/cm2

Transistor Count

582

Metallization Mask Layout

IS-1845ASxH

NOTES:

7. Both the GND pads must be bonded to ground.

8. The OUT double-sized bond pad must be double bonded for current sharing purposes.

9. The OSCGND double-sized bond pad must be double bonded to ground for current sharing purposes.

VFB

COMP

VREF

VC

VCC

OUT

GND

GND

OSCGND

RTCT

ISENSE