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STP20NM60FP датащи(PDF) 5 Page - STMicroelectronics

номер детали STP20NM60FP
подробное описание детали  N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NM60FP датащи(HTML) 5 Page - STMicroelectronics

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STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 10 A
RG = 4.7Ω VGS = 10 V
(see Figure 15)
25
20
42
11
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 20 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
VDD = 60 V
(see Figure 20)
390
5
25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20A, di/dt=100A/µs,
Tj = 150°C, VDD = 60 V
(see Figure 20)
510
6.5
26
ns
µC
A



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