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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST10F271B датащи(PDF) 44 Page - STMicroelectronics |
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ST10F271B датащи(HTML) 44 Page - STMicroelectronics |
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44 / 180 page  Internal Flash memory ST10F271B/ST10F271E 44/180 5.7 Write operation summary In general, each write operation is started through a sequence of 3 steps: 1. The first instruction is used to select the desired operation by setting its corresponding selection bit in the Flash Control Register 0. 2. The second step is the definition of the Address and Data for programming or the Sectors or Banks to erase. 3. The last instruction is used to start the write operation, by setting the start bit WMS in the FCR0. Once selected, but not yet started, one operation can be canceled by resetting the operation selection bit. A summary of the available Flash Module Write Operations are shown in the following Table 24: Flash write operations. Table 24. Flash write operations Operation Select bit Address and data Start bit Word Program (32-bit) WPG FARL/FARH FDR0L/FDR0H WMS Double Word Program (64-bit) DWPG FARL/FARH FDR0L/FDR0H FDR1L/FDR1H WMS Sector Erase SER FCR1L/FCR1H WMS Set Protection SPR FDR0L/FDR0H WMS Program/Erase Suspend SUSP None None |
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