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ST10F272M датащи(PDF) 149 Page - STMicroelectronics

номер детали ST10F272M
подробное описание детали  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  175 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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ST10F272M датащи(HTML) 149 Page - STMicroelectronics

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ST10F272M
Electrical characteristics
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24.8.12
32 kHz oscillator specifications
VDD = 5V ± 10%, VSS = 0V, TA = -40 to +125°C
Figure 48.
32 kHz crystal oscillator connection diagram
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0) and the package capacitance
between XTAL3 and XTAL4 pins is globally assumed equal to 4pF. The external resistance
between XTAL3 and XTAL4 is not necessary, since already present on the silicon.
Warning:
Direct driving on XTAL3 pin is not supported. Always use a
32 kHz crystal oscillator.
Table 66.
32 kHz oscillator characteristics
Symbol
Parameter
Conditions
Value
Unit
Min
Typ
Max
gm32
Oscillator Transconductance(1)
1.
At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
the current biasing is reduced to lower the power consumption of the system.
Start-up
20
31
50
µA/V
Normal run
8
17
30
µA/V
VOSC32 Oscillation Amplitude
(2)
2.
Not 100% tested, guaranteed by design characterization.
Peak to Peak
0.5
1.0
2.4
V
VAV32
Oscillation Voltage level(2)
Sine wave middle
0.7
0.9
1.2
V
tSTUP32 Oscillator Start-up Time
(2)
Stable VDD
–15
s
Table 67.
Minimum values of negative resistance (module) for 32 kHz oscillator
Frequency
CA = 6pF CA = 12pF CA = 15pF CA = 18pF CA = 22pF CA = 27pF CA = 33pF
32 kHz
--
--
150 k
120 k
90 k
CA
CA
Crystal
ST10F272M



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