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ST10F272M датащи(PDF) 149 Page - STMicroelectronics |
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ST10F272M датащи(HTML) 149 Page - STMicroelectronics |
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149 / 175 page ![]() ST10F272M Electrical characteristics 149/176 24.8.12 32 kHz oscillator specifications VDD = 5V ± 10%, VSS = 0V, TA = -40 to +125°C Figure 48. 32 kHz crystal oscillator connection diagram The given values of CA do not include the stray capacitance of the package and of the printed circuit board: the negative resistance values are calculated assuming additional 5pF to the values in the table. The crystal shunt capacitance (C0) and the package capacitance between XTAL3 and XTAL4 pins is globally assumed equal to 4pF. The external resistance between XTAL3 and XTAL4 is not necessary, since already present on the silicon. Warning: Direct driving on XTAL3 pin is not supported. Always use a 32 kHz crystal oscillator. Table 66. 32 kHz oscillator characteristics Symbol Parameter Conditions Value Unit Min Typ Max gm32 Oscillator Transconductance(1) 1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started, the current biasing is reduced to lower the power consumption of the system. Start-up 20 31 50 µA/V Normal run 8 17 30 µA/V VOSC32 Oscillation Amplitude (2) 2. Not 100% tested, guaranteed by design characterization. Peak to Peak 0.5 1.0 2.4 V VAV32 Oscillation Voltage level(2) Sine wave middle 0.7 0.9 1.2 V tSTUP32 Oscillator Start-up Time (2) Stable VDD –15 s Table 67. Minimum values of negative resistance (module) for 32 kHz oscillator Frequency CA = 6pF CA = 12pF CA = 15pF CA = 18pF CA = 22pF CA = 27pF CA = 33pF 32 kHz -- -- 150 k Ω 120 k Ω 90 k Ω CA CA Crystal ST10F272M |
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