MJF127 datasheet(1/2 Pages) ISC

номер детали	MJF127

подробное описание детали	Silicon PNP Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon PNP Darlington Power Transistor

MJF127

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -100V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat)= -3.5V(Max) @IC= -5A, IB= -20mA

APPLICATIONS

· Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICP

Collector Current-Pulse

-8

A

PC

Total Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

4.16

℃

/W

12

3

Аналогичный номер детали - MJF127

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJF127	267Kb / 8P	COMPLEMENTARY SILICON POWER DARLINGTONS
ON Semiconductor	MJF127	155Kb / 7P	COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W April, 2006 ??Rev. 5
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ON Semiconductor	MJF127	224Kb / 8P	Complementary Power Darlingtons For Isolated Package Applications May, 2024 - Rev. 8
ON Semiconductor	MJF127G	155Kb / 7P	COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W April, 2006 ??Rev. 5

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Аналогичный номер детали - MJF127

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