CAB3R5M12DM4

2

Rev. 1, DECEMBER 2024

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The information in this document is subject to change without notice.

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MOSFET Characteristics (Per Position) (TVJ = 25 °C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit Test Conditions

Note

Drain-Source Breakdown Voltage

V(BR)DSS

1200

V

VGS = 0 V, TVJ = -40 °C

Gate Threshold Voltage

VGS(th)

1.8

2.7

3.6

VDS = VGS, ID = 81 mA

2.2

VDS = VGS, ID = 81 mA, TVJ = 175 °C

Zero Gate Voltage Drain Current

IDSS

4

200

μA

VGS = 0 V, VDS = 1200 V

Gate-Source Leakage Current

IGSS

40

1000

nA

VGS = 15 V, VDS = 0 V

Drain-Source On-State Resistance

(Devices Only)

RDS(on)

3.5

4.6

mΩ

VGS = 15 V, ID = 311 A

Fig. 2

Fig. 3

6.5

VGS = 15 V, ID = 311 A, TVJ = 175 °C

Transconductance

gfs

278

S

VDS = 20 V, ID = 311 A

Fig. 4

273

VDS = 20 V, ID = 311 A, TVJ = 175 °C

Turn-On Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

EOn

3.7

3.7

3.8

mJ

VDD = 600 V,

ID = 300 A,

VGS = -4 V/15 V,

RG(EXT) = 0 Ω

Lσ = 17.4 nH

Fig. 11

Fig. 13

Turn-Off Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

EOff

3.0

3.2

3.3

Internal Gate Resistance

RG(int)

1.6

Ω

f = 100 kHz

Input Capacitance

Ciss

29

nF

VGS = 0 V, VDS = 800 V,

VAC = 25 mV, f = 100 kHz

Fig. 9

Output Capacitance

Coss

0.9

Reverse Transfer Capacitance

Crss

73

pF

Gate to Source Charge

QGS

268

nC

VDS = 800 V, VGS = -4 V/15 V,

ID = 311 A,

Per IEC60747-8-4 pg 21

Gate to Drain Charge

QGD

312

Total Gate Charge

QG

1044

FET Thermal Resistance, Junction to Case

RthJC

0.153

°C/W

Fig. 17