CAB003M09DM3

2

Rev. 2, June 2024

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The information in this document is subject to change without notice.

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MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit

Test Conditions

Note

Drain-Source Breakdown Voltage

V(BR)DSS

900

V

VGS= 0 V, TVJ = -40 °C

Gate Threshold Voltage

VGS(th)

1.8

2.1

3.5

VDS = VGS, ID = 130 mA

1.6

VDS = VGS, ID = 130 mA, TVJ = 175 °C

Zero Gate Voltage Drain Current

IDSS

4

400

μA

VGS = 0 V, VDS = 900 V

Gate-Source Leakage Current

IGSS

0.04

1.0

VGS = 15 V, VDS = 0 V

Drain-Source On-State Resistance

(Devices Only)

RDS(on)

2.5

3.25

mΩ

VGS = 15 V, ID = 400 A

Fig. 2

Fig. 3

4.3

VGS = 15 V, ID = 400 A, TVJ = 175 °C

Transconductance

g

fs

316

S

VDS= 20 V, ID= 400 A

Fig. 4

284

VDS= 20 V, ID= 400 A, TVJ = 175 °C

Turn-On Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

Eon

6.5

6.2

6.5

mJ

VDS = 400 V

ID = 400 A

VGS = -4 V / 15 V

RG(ON)= 6.8 Ω

RG(OFF)= 4.0 Ω

L= 13.6 μH

Fig. 11

Fig. 13

Turn-Off Switching Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

Eoff

7.2

6.9

7.1

Internal Gate Resistance

RG(int)

0.5

Ω

f = 100 kHz

Input Capacitance

Ciss

20.4

nF

VGS = 0 V, VDS = 900 V

VAC = 25 mV, f = 100 kHz

Fig. 9

Output Capacitance

Coss

1.49

Reverse Transfer Capacitance

Crss

78

pF

Gate to Source Charge

QGS

208

nC

VDS = 600 V, VGS = -4 V / 15 V

ID = 400 A

Per IEC60747-8-4 pg 21

Gate to Drain Charge

QGD

280

Total Gate Charge

QG

840

FET Thermal Resistance, Junction to Case

RthJC

0.129

°C/W

Fig. 17