NXP Semiconductors

7

34845

4.2

Static and dynamic electrical characteristics

Table 4. Static and dynamic electrical characteristics

Characteristics noted under conditions VIN = 12 V, VOUT = 35 V, ILED = 30 mA, fS = 600 kHz, fPWM = 600 Hz - 40 °C ≤ TA ≤ 85 °C, unless

otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise

noted.

Symbol

Characteristic

Min.

Typ.

Max.

Unit

Notes

Supply

VIN

Supply Voltage

5.0

10

21

V

ISHUTDOWN

Supply Current when in Shutdown Mode

• EN = Low, PWM = Low

-

2.0

10

μA

IOPERATIONAL

Supply Current when Operational Mode

• Boost = Pulse Skipping, Channels = 1% of Duty Cycle

EN = High, PWM = Low

-

5.0

6.5

mA

UVLO

Undervoltage Lockout

• VIN Rising

4.0

-

4.4

V

UVLOHYST

Undervoltage Hysteresis

• VIN Falling

-

0.25

-

V

VDC1

VDC1 Voltage

• CVDC1 = 2.2 μF

2.4

2.5

2.6

V

(7)

VDC2

VDC2 Voltage (VIN between 7.0 V and 21 V)

• CVD2C = 2.2 μF

5.7

6.0

6.3

V

(7)

Boost

VOUT1

VOUT2

Output Voltage Range

• VIN = 5.0 V

• VIN = 21 V

8.0

24

-

-

43

60

V

(8)

IBOOST_LIMIT

Boost Switch Current Limit

• 34845C

• 34845D

1.9

2.1

2.1

2.35

2.3

2.6

A

tBOOST_TIME

Boost Switch Current Limit Timeout

-

10

-

ms

RDS(on)

RDSON of Internal FET

• IDRAIN= 1.0 A

-

300

520

mW

IBOOST_LEAK

Boost Switch Off State Leakage Current

• VSWA,SWB = 60 V

-

-

1.0

mA

VOUTLEAK

Feedback pin Off State Leakage Current

• VOUT = 60 V

-

-

500

mA

EFFBOOST

Peak Boost Efficiency

• VOUT = 33 V, RL = 330 Ω

-

90

-

%

(9)

ILED/VIN

Line Regulation

• VIN = 7.0 V to 21 V, ICH = 30 mA

-0.2

-

0.2

%/V

ILED/VLED

Load Regulation

• VLED = 24 V to 40 V (all Channels), ICH = 30 mA

-0.2

-

0.2

%/V

DMIN

Minimum Duty Cycle

-

10

15

%

DMAX

Maximum Duty Cycle

88

90

-

%

VOVP_INT

OVP Internally Fixed Value

• (no external voltage resistor divider)

56

60

64

V

Notes

7.

This output is for internal use only and not to be used for other purposes.

8.

Minimum and maximum output voltages are dependent on Min/Max duty cycle condition.

9.

Boost efficiency test is performed under the following conditions: fSW = 600 kHz, VIN = 12 V, VOUT = 33 V and RL = 330 Ω. The following external

components are used: L = 10

μH, DCR = 0.1 Ω, COUT = 3x1 μF (ceramic), Schottky diode VF = 0.35 V.