ISC018N08NM6SC datasheet(5/15 Pages) INFINEON

номер детали	ISC018N08NM6SC

подробное описание детали	MOSFET OptiMOS™ 6 Power ‑Transistor, 80 V

PDF	15 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

Logo

5 / 15 page

OptiMOS™ 6 Power‑Transistor, 80 V

ISC018N08NM6SC

Public

Datasheet

Revision 1.0

https://www.infineon.com

2025‑02‑17

3 Electrical characteristics

at =25 °C, unless otherwise specified

Table 4 Static characteristics

Parameter

Symbol

Values

Unit Note / Test condition

Min.

Typ.

Max.

Drain‑source breakdown voltage

‑

V =0 V, =1 mA

Gate threshold voltage

2.4

3.0

3.5

V = , =114 μA

V I

Zero gate voltage drain current

‑

0.1

μA

V =64 V, =0 V, =25 °C

100

V =64 V, =0 V, =125 °C

Gate‑source leakage current

‑

100

V =±20 V, =0 V

Drain‑source on‑state resistance

‑

1.5

1.8

mΩ

V =10 V, =50 A

1.8

2.3

V =8 V, =25 A

Gate resistance

0.5

0.77

1.0

Ω ‑

Transconductance 6)

110

‑

S | |≥2| |

, =50 A

I R

Defined by design. Not subject to production test.

Table 5 Dynamic characteristics

Parameter

Symbol

Values

Unit Note / Test condition

Min.

Typ.

Max.

Input capacitance 7)

‑

4500

5400

V =0 V, =40 V, =1 MHz

Output capacitance 7)

1500

1900

Reverse transfer capacitance 7)

Turn‑on delay time

‑

ns V =40 V, =10 V, =25 A,

=1.6 Ω

Rise time

6.0

Turn‑off delay time

Fall time

6.5

Defined by design. Not subject to production test.

(BR)DSS

GS(th)

GS D

DSS

GSS

DS(on)

D DS(on)max D

iss

oss

rss

d(on)

G,ext

d(off)

ISC018N08NM6SC датащи(PDF) 5 Page - Infineon Technologies AG

ISC018N08NM6SC датащи(HTML) 5 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

датащи скачать

ссылки URL