CD551G datasheet(1/2 Pages) ISC

номер детали	CD551G

подробное описание детали	Silicon PNP Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon PNP Power Transistor

CD551G

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -120V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):-1.0V(Max) @IC= -0.5A

APPLICATIONS

· Switching Regulators

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

PC

Total Power Dissipation

@ TC=25℃

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.125

℃

/W

3

2

1

TO-220C Package

Pin 1 Base

2

Collector

Аналогичный номер детали - CD551G

производитель	номер детали	датащи	подробное описание детали
Compensated Deuices Inc...	CD5518B	114Kb / 2P	ZENER DIODE CHIPS
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Inchange Semiconductor ...	CD551B	268Kb / 2P	isc Silicon PNP Power Transistor

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Аналогичное описание - CD551G

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