ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH

FN6475 Rev 4.00

Page 5 of 11

June 27, 2014

Absolute Maximum Ratings

Thermal Information

Collector to Emitter Voltage (Open Base)

ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . . . +8V

ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . . . -8V

Collector to Base Voltage (Open Emitter)

ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . . +12V

ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . .-10V

Emitter to Base Voltage (Reverse Bias)

ISL73096, ISL73127 (NPN Characteristics) . . . . . . . . . . . . . . . . . . +5.5V

ISL73096, ISL73128 (PNP Characteristics) . . . . . . . . . . . . . . . . . . . -4.5V

Collector Current at 100% Duty Cycle, at TJ +175°C . . . . . . . . . . . .11.3mA

Power Dissipation (Pd), at TA +25°C . . . . . . . . . . . . . . . . . . . . . . . . . .1.25W

Power Dissipation (Pd), at TA +125°C. . . . . . . . . . . . . . . . . . . . . . . . . 0.41W

Thermal Resistance (Typical)

JA (°C/W)

JC (°C/W)

16 Ld FLATPACK Package( Notes 3, 4) . . .

120

28

Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Maximum Junction Temperature (TJMAX) . . . . . . . . . . . . . . . . . . . . .+175°C

Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493

Recommended Operating Conditions

Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product

reliability and result in failures not covered by warranty.

NOTES:

3.

JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

4. For

JC, the “case temp” location is the center of the package underside.

Electrical Specifications TA = +25°C, unless otherwise noted. Boldface limits apply across the operating temperature range, -55°C to

+125°C; across a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 to 300 rad(Si)/s or over a total ionizing dose of 50krad(Si)

with exposure a low dose rate of <10mrad(Si)/s at +25°C.

SYMBOL

DESCRIPTION

TEST CONDITIONS

MIN

(Note 5)TYP

MAX

(Note 5)

UNITS

NPN PARAMETER

V(BR)CBO

Collector to Base Breakdown Voltage

IC = 100µA, IE = 0

12

V

V(BR)CEO

Collector to Emitter Breakdown Voltage

IC = 100µA, IB = 0

8

V

V(BR)CES

Collector to Emitter Breakdown Voltage

IC = 100µA, base shorted to emitter

10

V

V(BR)EBO

Emitter to Base Breakdown Voltage

IE = 10µA, IC = 0

5.5

V

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 10mA, IB = 1mA

0.5

V

VBE

Base to Emitter Voltage

IC = 10mA

0.95

V

1.05

V

hFE

DC Forward Current Transfer Ratio

IC = 10mA, VCE = 2V

80

40

VA

Early Voltage

IC = 1mA, VCE = 3.5V

20

V

PNP PARAMETER

V(BR)CBO

Collector to Base Breakdown Voltage

IC = -100µA, IE = 0

10

V

V(BR)CEO

Collector to Emitter Breakdown Voltage

IC = -100µA, IB = 0

8

V

V(BR)CES

Collector to Emitter Breakdown Voltage

IC = -100µA, base shorted to emitter

10

V

V(BR)EBO

Emitter to Base Breakdown Voltage

IE = -10µA, IC = 0

4.5

V

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = -10mA, IB = -1mA

0.5

V

VBE

Base to Emitter Voltage

IC = -10mA

0.95

V

1.05

V

hFE

DC Forward Current Transfer Ratio

IC = -10mA, VCE = -2V

40

20

VA

Early Voltage

IC = -1mA, VCE = -3.5V

10

V

NOTE:

5. Compliance to data sheet limits is assured by one or more methods: production test, characterization and/or design.