ISL71841SEH

FN8735 Rev. 8.00

Page 8 of 30

Aug 10, 2023

Off Isolation

VISO

VEN = 4V, RL = 1kΩ, f = 200kHz, CL = 7pF,

VRMS = 3V

75

-

-

dB

Crosstalk

VCT

VEN = 0.8V, RL = 1kΩ, f = 200kHz, CL = 7pF,

VRMS = 3V

47

-

-

dB

Digital Input Capacitance

CA

f = 1MHz, V+ = V- = 0V

-

-

7

pF

Input Capacitance

CIN(OFF)

f = 1MHz, V+ = V- = 0V

-

-

5

pF

Output Capacitance

COUT(OFF)

f = 1MHz, V+ = V- = 0V

-

-

50

pF

Electrical Specifications (±12V) V+ = 12V, V- = -12V, V

AH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.

Boldface limits apply across the operating temperature range,

-55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high

dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 11)TYP

MAX

(Note 11)UNIT

Analog Input Signal Range

VS

V-

V+

V

Channel ON-Resistance

rON

V± = ±10.8V, ±13.2V

IOUT = -1mA, VIN = +5V, -5V, VEN = 0V

--

500

Ω

V± = ±10.8V, ±13.2V

IOUT = -1mA, VIN = V+, V-, VEN = 0V

--

700

Ω

rON Match Between Channels

ΔrON

VIN = +5V, -5V; IOUT = -1mA, VEN = 0V

-

10

20

Ω

ON-Resistance Flatness

RFLAT(ON)

VIN = +5V, -5V, V± = ±13.2V, VEN = 0V

-

-

25

Ω

VIN = +5V, -5V, V± = ±10.8V, VEN = 0V,

TA = +25°C, -55°C, +125°C

--

30

Ω

VIN = +5V, -5V, V± = ±10.8V, VEN = 0V, post

radiation, TA = +25°C

--

40

Ω

Quiescent Supply Current

I+

VREF= 5.5V, VIN = 0V, VA = 0.8V, VEN = 0.8V,

V± = ±10.8V, ±13.2V

--

400

µA

I-

VREF= 5.5V, VIN = 0V, VA = 0.8V, VEN = 0.8V,

V± = ±10.8V, ±13.2V

-400

--

µA

Standby Supply Current

I+

VREF = 5.5V, VIN = 0V, VA = 0.8V, VEN = 4.0V,

V± = ±10.8V, ±13.2V

--

400

µA

I-

VREF = 5.5V, VIN = 0V, VA = 0.8V, VEN = 4.0V,

V± = ±10.8V, ±13.2V

-400

--

µA

Quiescent Supply Current Into VREF

IREF

VREF = 5.5V, VIN = 0V, VA = 0.8V, VEN = 0.8V,

V± = ±10.8V, ±13.2V

--

35

µA

Standby Current Into VREF

IREF(STBY)

VREF = 5.5V, VIN = 0V, VA = 0.8V, VEN = 4.0V,

V± = ±10.8V, ±13.2V

--

35

µA

DYNAMIC

Transition Time

tALH

Figures 5, 6

-0.5

800

ns

Transition Time

tAHL

Figures 5, 6

-0.5

800

ns

Break-Before-Make Delay

tBBM

Figures 9, 10 TA = -55°C, +25°C, +125°C

5

50

200

ns

Post radiation

5

-

400

ns

Enable Turn-On Time

tENABLE

Figures 7, 8 TA = -55°C, +25°C, +125°C

-

0.5

600

ns

Post radiation

-

-

800

ns

Electrical Specifications (±15V) V+ = 15V, V- = -15V, V

AH = 4.0V, VAL = 0.8V, VREF = VEN = 5.0V, TA= +25°C, unless otherwise noted.

Boldface limits apply across the operating temperature range,

-55°C to +125°C or across a total ionizing dose of 300krad(Si) with exposure of a high

dose rate of 50 to 300krad(Si)/s or a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 11)TYP

MAX

(Note 11)UNIT