TB2104F

2002-10-30

6

Characteristic

Symbol

Rating

Unit

Supply voltage

-0.3~7.0

V

Input voltage

V

Driver voltage

V

Driver current

50

mA

Power dissipation

800

mW

Operating temperature

-40~85

°C

Storage temperature

-55~150

°C

(Note) In case it is used at more than Ta = 25°C, it is considered by reducing 6.4mW each 1°C.

Characteristic

Symbol

Test

Cir

-

cuit

Test Condition

Min.

Typ.

Max.

Unit

Operating supply voltage (1)

—

Logic unit

4.5

5.0

5.5

V

Operating supply voltage (2)

—

Driver unit

10

~

50

V

Operating supply current (1)

—

No load, no input

—

0.3

1.5

mA

Operating supply current (2)

—

—

2.3

3.5

mA

“H” level

×0.7

~

Input

voltage

“L” level

—

CMOS input terminal

GND

~

×0.3

V

“H” level

-0.5

~

Open

—

×0.5

—

Input

voltage

“L” level

—

3

-value input terminal

AD1, AD2

GND

~

GND

+0.5

V

“H” level

-1.0

~

1.0

Input

current

“L” level

—

CMOS

input terminal

-1.0

~

1.0

µA

Input resistance

—

3

-value input terminal

80

100

120

kΩ

“H” level

—

-8.4

-5

Output

current

“L” level

—

HVO

-1~-20

output terminal

2.0

2.7

—

mA

“H” level

—

-0.3

-0.1

Output

current

“L” level

—

DO output

terminal

0.1

0.3

—

mA

Clock frequency

CLK max. operating

—

5.0

4.0

MHz

Clock pulse width

CLK min. operating

75

60

—

ns

Data setup time

50

40

—

ns

Data hold time

DIN min. operating pulse

width

50

40

—

ns

LS pulse width

LS min. operating

80

60

—

ns

CLK

-LS delay time

CLK→LS delay time

50

40

—

ns

CLK

-DOUT delay time

Fig. 1

CLK→DOUT delay time

CL = 30pF

—

120

160

ns