2N6248 datasheet(1/3 Pages) ISC

номер детали	2N6248

подробное описание детали	Silicon PNP Power Transistor

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2N6248

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min)

·

Low Collector Saturation Voltage-

: VCE(sat)= -3.5V(Max)@ IC= -10A

APPLICATIONS

·

Designed for DC-DC converter, emergency lighting

inverter and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-110

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

IB

Base Current-Continuous

-5

A

PC

Collector Power Dissipation

@ TC=25℃

125

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.4

℃

/W

3

Аналогичный номер детали - 2N6248

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List of Unclassifed Man...	2N6248	359Kb / 7P	SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
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