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2SB908 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SB908
подробное описание детали  Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SB908 датащи(HTML) 2 Page - Toshiba Semiconductor

  2SB908 Datasheet HTML 1Page - Toshiba Semiconductor 2SB908 Datasheet HTML 2Page - Toshiba Semiconductor 2SB908 Datasheet HTML 3Page - Toshiba Semiconductor 2SB908 Datasheet HTML 4Page - Toshiba Semiconductor 2SB908 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SB908
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −100 V, IE = 0
―
―
−20
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
―
―
−2.5
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−80
―
―
V
hFE (1)
VCE = −2 V, IC = −1 A
2000
―
―
DC current gain
hFE (2)
VCE = −2 V, IC = −3 A
1000
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = −3 A, IB = −6 mA
―
―
−1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −3 A, IB = −6 mA
―
―
−2.0
V
Turn-on time
ton
―
0.15
―
Storage time
tstg
―
0.80
―
Switching time
Fall time
tf
−IB1 = IB2 = 6 mA, DUTY CYCLE ≤ 1%
―
0.40
―
μs
Marking
B908
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
VCC ≈ −30 V
20 μs
IN
PUT
IB2
IB1
OUTPUT
IB2



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