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2SA1837 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SA1837 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SA1837 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (mA) fT – IC Collector-emitter voltage VCE (V) Safe Operating Area −1.0 0 0 −0.2 −0.4 −0.6 −0.8 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Common emitter VCE = −5 V −25 Tc = 100°C 25 1000 10 30 50 100 300 500 −0.003 −0.01 −0.03 −0.1 −0.3 −1 −3 Common emitter VCE = −5 V −25 Tc = 100°C 25 500 10 −5 −10 −30 −100 −300 −1000 30 50 100 300 Common emitter VCE = −10 V Tc = 25°C −5 −0.01 −1 −3 −10 −30 −100 −300 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) 100 ms* 10 ms* 1 ms* DC operation −3 −0.01 −0.003 −0.03 −0.05 −0.1 −0.3 −0.5 −1 −0.01 −0.03 −0.1 −0.3 −1 −3 Common emitter IC/IB = 10 −25 Tc = 100°C 25 −1.0 0 0 −0.2 −0.4 −0.6 −0.8 −2 −4 −6 −8 −10 Common emitter Tc = 25°C −4 IB = −2 mA −6 −8 −10 −20 |
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